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Watanabe, Kazuhiro; Ando, Yasunori*
Purazuma, Kaku Yugo Gakkai-Shi, 81(10), p.792 - 797, 2005/10
no abstracts in English
Fukuda, Mitsuhiro; Ito, Hisayoshi; Oshima, Takeshi; Saido, Masahiro; Tanaka, Atsushi
Charged Particle and Photon Interactions with Matter, p.813 - 859, 2003/11
An ion beam has been widely applied to a variety of research fields of materials, space, and bio-sciences. Notable results, which were hard to obtain in applications of a 
ray and an electron beam, have been produced by the ion beam application. Ion beams interacting with matter have such superior properties as highly localized ionization and excitation, production of secondary particles, implantation of different atoms, and nuclear transmutation of constituent atoms. Skillful utilization of the ion beam properties makes remarkable progress in creation of new materials and precise investigation of matters. The ion beam irradiation research facility, TIARA, was established in 1993 at JAERI for extensive applications of ion beams. An accelerator complex provides light to heavy ion beams with a broad energy range from keV to GeV. Various ion beam technologies pioneering the ion beam applications have been developed at TIARA. In this paper, new applications of accelerated ion beams to material, space, and biological science and engineering carried out mainly at TIARA are reviewed.
Hanada, Masaya
Purazuma, Kaku Yugo Gakkai-Shi, 78(6), p.541 - 547, 2002/06
The beam technology developed for neutral beam injection in fusion application has been applied to industry. Presently, positive ion beams are widely applied to process the semiconductor. For example, an intense argon ion beam is used for milling substrates of the semiconductor, and a large liquid crystal is also manufactured by implanting P+ or B+ ions on glass plates. Recently, the intense negative ion beam has also been developed and is being applied to new field in semiconductor industry. Japan Atomic Energy Research Institute (JAERI) is developing new technology for slicing the thin single-crystal semiconductor plates of several tens of micrometers in thickness from the ingot without waste by implanting the MeV-class H
ion beam developed for ITER. This process is realized only by using the high-energy negative ion beam since the positive ion implantation requires the mass separation that practically limits the ion beam energy, namely, penetration depth of the ions. By implanting 725 keV H ions directly onto the Si ingot, the single-crystal Si plates of 10 mm in thickness have successfully been sliced. It is expected that this technology opens mass productions of high efficiency solar cells and micro-machines.
Saido, Masahiro; Fukuda, Mitsuhiro; Arakawa, Kazuo; Tajima, Satoshi; Sunaga, Hiromi; Yotsumoto, Keiichi; Tanaka, Ryuichi
Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.183 - 188, 1998/00
no abstracts in English
Suzuki, Yasuo
Nihon Genshiryoku Gakkai Kyushu Shibu Dai-14-Kai Kenkyu Happyo Koenkai Yoshishu, 0, p.5 - 8, 1995/00
no abstracts in English
